Sensor for simultaneously allowing magnetic measurements and thermal measurements used in the microprocessor technology areas, uses tunnel effect MOS and Hall effect sensor of CMOS type

摘要

The sensor (1) includes a Hall effect sensor of CMOS type, having two polarisation contacts (12a,12b) connected to a polarisation circuit and two measuring contacts (13a,13b) connected to the circuit for measuring Hall voltage (Vh). It includes a tunnel effect MOS junction forming a grid (16) superimposed on this magnetic sensor between the polarisation contacts and measuring contacts, this grid being adapted to generate a grid current (Ig) proportional to the temperature of the dual sensor, it includes a measuring circuit (19) of the grid current, adapted for forming an output signal (Vth, Ith) representative of this temperature.