首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >Actively Alleviate Power Gating-Induced Power/Ground Noise Using Parasitic Capacitance of On-Chip Memories in MPSoC
【24h】

Actively Alleviate Power Gating-Induced Power/Ground Noise Using Parasitic Capacitance of On-Chip Memories in MPSoC

机译:通过使用MPSoC中片上存储器的寄生电容来主动缓解功率门控引起的功率/地面噪声

获取原文
获取原文并翻译 | 示例

摘要

By integrating multiple processing units (PUs) and memories on a single chip, multiprocessor system-on-chip (MPSoC) can provide higher performance per energy and lower cost per function to applications with growing complexity. On the other hand, shrinking feature sizes and reducing power supply voltages also make MPSoCs more susceptible to various reliability threats, such as power/ground (P/G) noises. Power gating is an effective technique to minimize leakage power. However, it also introduces significant P/G noises in MPSoCs. With significant area, power and performance overheads, traditional methods rely on reinforced circuits or fixed protection strategies to reduce P/G noises caused by power gating. In this paper, we propose a systematic approach to actively alleviating P/G noises using the parasitic capacitance of on-chip memories through sensor network on-chip (SENoC). We use the parasitic capacitance of on-chip memories as dynamic decoupling capacitance to suppress P/G noises and develop a detailed HSPICE model for related study. SENoC is developed to not only monitor and report P/G noises, but also coordinate PUs and memories to alleviate such transient threats at run time. Extensive evaluations show that compared with traditional method, our approach saves 12.6%–62.8% energy consumption and achieves 14.3%–69.8% performance improvement for different applications and MPSoCs with different scales. We implement the circuit details of our approach and show its low area and energy consumption overheads.
机译:通过在单个芯片上集成多个处理单元(PU)和存储器,多处理器片上系统(MPSoC)可以为日益复杂的应用程序提供更高的每能量性能和更低的每功能成本。另一方面,缩小功能尺寸和降低电源电压也使MPSoC更容易受到各种可靠性威胁的影响,例如电源/地(P / G)噪声。功率门控是使泄漏功率最小化的有效技术。但是,它也会在MPSoC中引入大量的P / G噪声。传统方法具有大量的面积,功率和性能开销,传统方法依靠增强电路或固定保护策略来减少由功率门控引起的P / G噪声。在本文中,我们提出了一种系统化的方法,可通过片上传感器网络(SENoC)利用片上存储器的寄生电容来主动减轻P / G噪声。我们使用片上存储器的寄生电容作为动态去耦电容来抑制P / G噪声,并开发出详细的HSPICE模型用于相关研究。 SENoC的开发不仅可以监视和报告P / G噪声,还可以协调PU和内存以减轻运行时的此类瞬态威胁。广泛的评估表明,与传统方法相比,对于不同规模的不同应用和MPSoC,我们的方法节省了12.6%–62.8%的能耗,并实现了14.3%–69.8%的性能提升。我们实现了该方法的电路细节,并显示了其较小的面积和能耗开销。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号