A Performance-Aware MOSFET Threshold Voltage Measurement Circuit in a 65-nm CMOS

摘要

This paper presents a new performance-aware nanometer-scale MOSFET threshold voltage ( measurement circuit that employs dual-segment nonlinear temperature compensation on the Brokaw circuit topology. Besides, a preregulator feedback control loop is used to enhance the power supply rejection (PSR) of the circuit. Fabricated in a UMC 65-nm CMOS process, it consumes at 1.1 V supply. The measured results indicated that the measurement circuit achieves an average temperature coefficient (TC) of 28.7 ppm/°C over 15 samples in a temperature range of −30 °C to 80 °C. PSRs of −54.5 dB at 100 Hz and −43.5 dB at 10 MHz are obtained without any output filtering capacitor. The average reference voltage is 470.3 mV, which is close to the extrapolated for a low-threshold nMOS transistor at absolute zero.