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28-nm Latch-Type Sense Amplifier Modification for Coupling Suppression

机译:用于耦合抑制的28nm锁存型感测放大器修改

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With the development of modern semiconductor fabrication technology, the channel length of the CMOS device and the device pitch continually shrink accompanied by more and more severe process variation and signal coupling effect, respectively. In this paper, we explain how the coupling effect interferes with the action of the sense amplifier (SA); then we introduce a coupling suppressed SA. In our design, we adjust the time control. The coupled signals are classified and suppressed by different turn on currents. The new architecture can achieve obvious improvement under differential input in our Monte Carlo simulation. The area and speed cost can be omitted. Through our work, we recommend our design of SA and draw attention to the coupling effect for other circuits.
机译:随着现代半导体制造技术的发展,CMOS器件的沟道长度和器件间距不断缩小,分别伴随着越来越严重的工艺变化和信号耦合效应。在本文中,我们解释了耦合效应如何干扰感测放大器(SA)的作用。然后介绍耦合抑制的SA。在我们的设计中,我们调整了时间控制。耦合信号通过不同的导通电流进行分类和抑制。在我们的蒙特卡洛模拟中,新架构在差分输入下可以实现明显的改进。面积和速度成本可以省略。通过我们的工作,我们建议设计SA,并注意其他电路的耦合效应。

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