SUBSTANTIAL ROLE OF TRANSPORT DIMENSIONALITY IN THE HOOGE PARAMETER FOR INVERSION-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

摘要

This paper proposes a Hooge parameter model for an inversion-channel metal-oxide-semiconductor field-effect transistor. We note that the inversion layer carriers act in two dimensions. The impact of dimensionality on the Hooge parameter is integrated into the model. The model is examined using various published experimental results.