Analysis of electron transport in AlGaN/GaN superlattice HEMTs for isotopes ~(14)N and ~(15)N

摘要

There has been considerable interest in superlattice structures of large band gap semiconductors like AlGaN/GaN based arrangements due to its measured parameter and favorable material properties, such as high electron mobility and very high thermal conductivity. Hence, an understanding of the electron transport in GaN has always been prioritized to improve the GaN semiconductors based devices. Here the transport properties of electron in isotopically mixed Ga~(14)N~(15)N alloy channels have been studied. Different ratio of isotopes has been considered and their effect on the alloy scattering phenomenon of specimen is studied.