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机译:使用后蚀刻表面处理,常掉Al 2 O 3 / AlGaN / GaN MOS-HEMT的电子传输性能和导通电阻的改善
Xidian Univ Sch Adv Mat & Nanotechnol Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
Univ Bristol Ctr Device Thermog & Reliabil HH Wills Phys Lab Bristol BS8 1TL Avon England;
Xidian Univ Sch Microelect Natl Key Discipline Lab Wide Bandgap Semicond Tec Xian 710071 Peoples R China;
AlGaN/GaN; interfacial engineering; metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs); normally-OFF; post-etch surface treatment;
机译:采用不同的蚀刻后表面处理的常关型Al2O3 / AlGaN / GaN MOS-HEMT中的界面和边界俘获效应?
机译:采用氧等离子体处理的常关型p-GaN / AlGaN / GaN高电子迁移率晶体管
机译:常关的P-GaN / AlGaN / GaN高电子迁移晶体管使用氧等离子体处理
机译:具有ZnO栅极绝缘体和氯表面处理的AlGaN / GaN MOS-HEMT
机译:处理表面状态的传输拐点和电荷陷阱对AlGaN / GaN HFET漏极电流的影响。
机译:用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究
机译:使用后蚀刻表面处理,常掉Al 2 O 3 / AlGaN / GaN MOS-HEMT的电子传输性能和导通电阻的改善
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管