Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide $(hbox{HfO}_{2})$ Film Added on Silicon Dioxide

摘要

In this paper, metal-oxide-semiconductor (MOS) capacitors fabricated on p-type silicon substrate with hafnium oxide (HfO2 ) film added on silicon dioxide (SiO2) were demonstrated as reliable temperature-detecting devices. The saturation current of MOS (p) capacitor with added HfO2 film is easy to saturate within 0.5 V. From 40 degC to 90degC, each increase of 10degC almost doubles the saturation current. The C-V curves show that the interface properties of Si/SiO2 and SiO2/HfO 2 are good. It was also shown that these devices are reliable even though they had been electrically stressed at various temperatures (30degC~90degC) for 15 000 s. They have the potential to be integrated into the circuits as temperature detectors in the era of ultralarge-scale-integration technology