Characterization of Stacked Hafnium Oxide (HfO_2) / Silicon Dioxide (SiO_2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

摘要

In this paper, the stacked HfO_2/SiO_2 MOS tunneling temperature sensors prepared by low temperature processing are investigated. The temperature responses of the stacked HfO_2/SiO_2 MOS tunneling temperature sensors at high and low temperature regions are not the same. The saturation current of the stacked HfO_2/SiO_2 MOS tunneling temperature sensor may affected by Frenkel-Poole effect at high temperature. It was also observed that the thicker stacked HfO_2/SiO_2 MOS tunneling temperature sensors are easier to be affected by Frenkel-Poole effect at high temperature. The stacked HfO_2/SiO_2 MOS tunneling temperature sensors can operate under low voltage and therefore consume less power as compared with the pure SiO_2 tunneling temperature sensors.