Atomic layer deposition of hafnium oxide or hafnium silicon oxide, involves depositing material on substrate using hafnium precursor, fluctuating process temperature of substrate between low and high temperatures after heating

摘要

A material is deposited on a substrate (3) by atomic layer deposition, fluctuating the process temperature of substrate between low and high temperatures after heating, preferably from 150[deg] C to 300[deg] C. An amide precursor or hafnium precursor is used for layer deposition.