Fabrication of stack for emitter windows of bi-complementary metal oxide semiconductor circuits involves depositing silicon nitride and silicon dioxide layers in semiconductor substrate at same temperature and pressure

摘要

A stack is fabricated by depositing of a silicon nitride layer on a semiconductor substrate, in an ammonia and bis(tert-butylamino)silane atmosphere at 600-650 deg C and 40-53 Pa. A silicon dioxide layer is deposited on the silicon nitride layer, in an oxygen and bis(tert-butylamino)silane atmosphere at the same temperature and pressure. Fabrication of a stack comprises depositing of a silicon nitride (Si3N4) layer on a semiconductor substrate. Depositing is done in a reactor in an ammonia and bis(tert-butylamino)silane atmosphere at 600-650 deg C and 40-53 Pa. A silicon dioxide (SiO2) layer is deposited on the Si3N4 layer, in the same reactor, in an oxygen and bis(tert-butylamino)silane atmosphere at the same temperature and pressure.