A Micromachined Wide-Bandwidth Magnetic Field Sensor Based on All-PMMA Electron Tunneling Transducer

摘要

All-PMMA-based tunneling magnetic sensors were fabricated by hot embossing replication with silicon templates. The silicon templates had smooth surfaces, positive profiles, and pyramid-like pits with a high aspect ratio. With this fast (20 min), simple (one-step), and repeatable method, the all-PMMA tunneling sensor platform yielded sharp tunneling tips with 75 (mu)m in baseline and 50 (mu)m in depth. The sensors were assembled and fixed with measurement circuits, after their electrodes were patterned with modified photolithography and Co film was deposited with e-beam evaporation. A natural frequency response of 1.3 kHz was observed, and a tunneling barrier height of 0.713 eV was tested. Due to the quadratic relation between magnetic force and the field, the sensor field response (7.0 X 10~(6) V/T~(2)) was also quadratic. The noise voltage at 1 kHz is 0.2 mV, corresponding to a magnet field of 0.46 X 10~(-6) T. The bandwidth of this senor is 18 kHz. This new type of sensor platform is promising for the next generation of microsensing applications.