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首页> 外文期刊>Journal of Microelectromechanical Systems >Polymer-Based Wide-Bandwidth and High-Sensitivity Micromachined Electron Tunneling Accelerometers Using Hot Embossing
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Polymer-Based Wide-Bandwidth and High-Sensitivity Micromachined Electron Tunneling Accelerometers Using Hot Embossing

机译:使用热压印的聚合物基宽带高灵敏度微机械电子隧穿加速度计

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摘要

The first PMMA-based membrane tunneling ac-celerometers were fabricated by hot embossing replication with silicon molds. The silicon molds were prepared by a combinative etching technique involving anisotropic bulk etching and modified plasma dry etching. The constructed molds hold both pyramid pits and positive profile sidewalls with smooth surfaces and steep angles, which were necessary for the hot embossing demolding. After electrodes patterned on embossed PMMA structures, the accelerometers, 8 mm×8 mm×1 mm, were packaged and assembled on a measurement circuit board. The exponential relationship between tip currents and applied deflection voltages presented a tunneling barrier height of 0.17 eV. The natural frequency of sensors was about 128 Hz. The bandwidth of the feedback system was 6.3 kHz. The sensitivity of voltage over acceleration was 20.6 V/g, and the resolution was 0.2485 μg/(Hz){sup}(1/2) (g = 9.8 m/s{sup}2).
机译:第一批基于PMMA的膜隧穿加速度计是通过使用硅模具进行热压印复制而制造的。通过包括各向异性体蚀刻和改进的等离子体干法蚀刻的组合蚀刻技术来制备硅模具。所构造的模具可容纳金字塔形凹坑和具有平滑表面和陡峭角度的正轮廓侧壁,这对于热压花脱模是必需的。在压花的PMMA结构上对电极进行图案化之后,将8mm×8mm×1mm的加速度计包装并组装在测量电路板上。尖端电流与施加的偏转电压之间的指数关系表示隧穿势垒高度为0.17 eV。传感器的固有频率约为128 Hz。反馈系统的带宽为6.3 kHz。电压对加速度的灵敏度为20.6 V / g,分辨率为0.2485μg/(Hz){sup}(1/2)(g = 9.8 m / s {sup} 2)。

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