Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature

摘要

A microwave noise technique is applied to study hot phonons in a biased two-dimensional AlGaN/GaN channel. The longitudinal optical (LO)-phonon-conversion lifetime is estimated from the measured dependence of hot-electron temperature on supplied power. At a lattice temperature of 373 K, the mean value of the effective LO-phonon lifetime (350 fs) is close to the value obtained at room temperature.