NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE USING ALGAN/GAN SUPERLATTICE AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed are a nitride semiconductor light emitting device using an AlGaN/GaN superlattice layer to improve optical and electrical characteristics, and a manufacturing method thereof. The nitride semiconductor light emitting device according to the present invention comprises: an n-type nitride semiconductor layer; an AlGaN/GaN superlattice layer which is formed by alternately stacking GaN layers and AlGaN layers on the n-type nitride semiconductor layer; an active layer which is formed on the AlGaN/GaN superlattice layer; and a p-type semiconductor layer which is formed on the active layer.