Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 μm

摘要

Microphotoluminescence studies of annealed In(x)Ga(1 — x)N(y)As(1 — y)/ GaAs quantum wells fabricated by molecular beam epitaxy for optical emission in the 1.3 μm spectral range revealed several sharp peaks about 2-7 meV wide in the emission spectra. The intensity of the discrete lines decreased strongly with increasing lattice temperature and was absent in as-grown (unannealed) quantum wells. Such quantum dot-like emission lines are attributed to the recombination of excitons strongly localized at alloy fluctuations composed of In-N-rich clusters.