机译:室温下以1.3μm波长发射的稀氮化物InGaAsN / GaAs V槽量子线
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland,Department of Physics, Technion-Israel Institute of Technology, Haifa 32000, Israel;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
Interdisciplinary Center for Electron Microscopy, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
Interdisciplinary Center for Electron Microscopy, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL),CH-1015 Lausanne, Switzerland;
机译:氢化的InGaAsN V槽量子线的极化特性的温度敏感性降低
机译:氢化的InGaAsN V槽量子线的极化特性的温度敏感性降低
机译:金属有机化学气相沉积和1.3μmInGaAsN垂直腔面发射激光器生长的InGaAsN量子阱中的Al污染
机译:在Gaas衬底上的1.3 / spl mu / m ingaasn量子阱垂直腔表面发射激光器
机译:GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
机译:具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
机译:I型InAsN和InGaAsN在InP上生长的稀氮化物量子阱的扩展波长中红外光致发光