Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

摘要

This paper studies the total ionizing dose (TID) and single event effect (SEE) in quasi-SOI nMOSFETs for the first time. After exposure to gamma rays, the off-state leakage current (I_(off)) of a quasi-SOI device increases with the accumulating TID, and the on-state bias configuration is shown to be the worst-case bias configuration during irradiation. Although an additional TID-sensitive region is introduced by the unique structure of the quasi-SOI device, the influence of positive charge trapped in L-type oxide layers on the degradation of device performance is neglectable. Since the TID-induced leakage path in the quasi-SOI device is greatly reduced due to the isolation of L-type oxide layers, the TID-induced I_(off) degradation in the quasi-SOI device is greatly suppressed. In addition, 3D simulation is performed to investigate the SEE of the quasi-SOI device. The full-width at half-maximum (FWHM) of worst-case drain current transient and collected charges of the quasi-SOI device after single-ion-striking is smaller than in a bulk Si device, indicating that the quasi-SOI device inherits the advantage of an SOI device in single event transient immunity. Therefore, the quasi-SOI device, which has improved electrical properties and radiation-hardened characteristics for both TID and SEE, can be considered as one of the promising candidates for space applications.