Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET)

摘要

Total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET) are investigated using TCAD simulations. First, two types of TFET structures are constructed numerically. Then the electrical properties of these devices are studied under different irradiation doses, demonstrating that they are slightly affected by TID effects, especially for the vertical transistor. The maximum photocurrents under different operation voltage (VD) and dose rate are extremely small with respect to the conventional bulk transistors. Physical mechanisms of device performance degradation are investigated in detail. The results suggest that the vertical ferroelectric TFET, which shows better electrical performance and radiation-hard characteristics compared with the planar one, is useful for the design of very large-scale logic circuits for applications in harsh radiation environments.