Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

摘要

In this paper, the total ionizing dose (TID) and single-event effect (SEE) in vertical channel double-gate (DG) nMOSFETs are comprehensively investigated. Due to the vertical channel structure and the excellent gate control capability, the vertical channel DG transistor is relatively resistant to TID and transient ionization effect. However, the dc characteristics of vertical channel DG device are very sensitive to permanent damage induced by a few ions hitting the device. The on-state current and transconductance of the vertical channel DG MOSFETs show significant degradation after exposure to heavy ions, which is attributed to the formation of displacement damage in the channel. As the device feature size scales down to the deca-nanometer regime, the influence of permanent damage induced by a few ions striking the device static performance cannot be ignored and should be seriously considered in radiation-hardened technologies.