Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation

摘要

Transparent conducting polymer-GiaN Schotlk) junction was fabricated in order to study deep level defects of Ⅲ-Ⅴ nitride films under light irradalion. The leakage current was as low us 10_(-6)Acm~(-2) at reverse bias of 10V. The Schottky barrier height reaches 1.15eV under dark condition and under normalized solar spectrum AM 1.50 the fill factor was up to 0.71 with an open-circuit voltage of 0.72 V and a shnri-circuil current of 0.37 m A cm~_(-2). Deep level optical spectroseopy analysis revealed the presence of gallium vacancies (V_(Ga)) and/ or related complexes impurities (V_(Ga)-O_N-and/or V_(Ga)-C_N) at the interface between PEDOT:PSS and n-GaN. The Schotikx and photovoltaic properties are discussed in term of deep level defects concentration.