Analysis method of the Schottky junction, evaluation method of a semiconductor wafer, evaluation method of the insulating film, and the Schottky junction analyzer

摘要

PROBLEM TO BE SOLVED: To analyze a Schottky junction, even in a semiconductor wafer with a complex semiconductor layer structure by eliminating the need for extracting such parameter values as a built-in potential Vbi and an impurity concentration Nd of a contact layer. ;SOLUTION: A leak current and a junction capacity are measured by a current measuring instrument 12 and a capacity measuring instrument 13, respectively, for a Schottky junction formed on a semiconductor wafer 10, and the current-voltage characteristics and the capacity-voltage characteristics of the Schottky junction are obtained by function-deriving means 14 and 15. Then, a capacity voltage function is integrated by an integral operator 16, and the electric field dependence of a Schottky barrier height is calculated, based on the current-voltage characteristic and the depletion layer electric charge-voltage characteristics, obtained from the above integration by an operation device 17 for extracting the dependence.;COPYRIGHT: (C)1998,JPO