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Optical and electrical properties of nitrogen ion implanted fluorine doped tin oxide films

机译:氮离子注入的氟掺杂氧化锡薄膜的光电性能

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Tin oxide films were implanted with N+ at various energies between 5 and 40 keV for different ion doses between 10(14) and loll cm(-2). The microstructure, optical and electrical properties of the films were investigated. From transmission electron microscopy the implanted films were shown to be amorphous. The implanted thickness for the 10 and 40 keV were found to be 30 and 110 nm, respectively. The ion penetration depths for these films were calculated using SRIM-2000 and found to be 35 nm (at 10 keV) and 120 nm (at 40 keV). The optical properties of the implanted films were measured and transmittance was found to decrease with increasing implantation energy and/or ion dose. The luminous transmittance of the films decreased from 0.70 for the unimplanted film to about 0.57 for the highest implantation energy and largest ion dose. By annealing the films large part of the defects have been removed and thereby increasing the transmittance of the films. The electrical properties of the films were investigated and found an increase of sheet resistance with increasing implantation energy and/or ion dose. The increase of sheet resistance after ion implantation is caused by a loss of crystallinity of the tin oxide films. After annealing the sheet resistance decreases because the crystallinity was partially recovered. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 32]
机译:在10到14厘米至11厘米(-2)之间的不同离子剂量下,以5到40 keV之间的各种能量注入N +氧化锡膜。研究了薄膜的微观结构,光学和电学性质。从透射电子显微镜观察,植入的膜显示为非晶态的。发现10和40keV的注入厚度分别为30和110nm。这些膜的离子渗透深度使用SRIM-2000计算得出,分别为35 nm(在10 keV时)和120 nm(在40 keV时)。测量了植入膜的光学性质,发现透射率随着植入能量和/或离子剂量的增加而降低。膜的透光率从未注入膜的0.70降低到最高注入能量和最大离子剂量的约0.57。通过对膜进行退火,去除了大部分缺陷,从而提高了膜的透射率。研究了膜的电性能,发现随着注入能量和/或离子剂量的增加,薄层电阻增加。离子注入后的薄层电阻的增加是由氧化锡膜的结晶性降低引起的。退火后,由于结晶度被部分恢复,所以薄层电阻降低。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:32]

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