氟掺杂氧化锡薄膜载体材料在不同介质溶液中的电学稳定性

摘要

背景:在电化学基因芯片中,氟掺杂氧化锡(FTO)薄膜载体材料的化学修饰、DNA杂交反应等需要在不同的介质溶液中进行,而各种介质溶液腐蚀会对其性能产生较大的影响,甚至出现性能劣化或失效现象.目的:观察氟掺杂氧化锡薄膜载体材料在NaOH、NaCl、Na2SO4介质溶液中的电学稳定性.方法:利用相对电阻变化(ΔR/R)方法观察了氟掺杂氧化锡薄膜在温度分别为25 ℃和50 ℃、浓度为1 mol/L的NaOH、NaCl、Na2SO4介质溶液中的电学稳定性.结果与结论:在3种介质溶液中,氟掺杂氧化锡薄膜在25 ℃的NaCl和Na2SO4溶液中ΔR/R值变化极小,而在25 ℃的NaOH溶液中ΔR/R值变化要远大于前两者;氟掺杂氧化锡薄膜在50 ℃的NaOH、NaCl、Na2SO4 3种介质溶液中ΔR/R变化值显示出了相同的变化规律,随着浸泡时间的延长,ΔR/R值发生了明显的迅速增大,薄膜导电性能快速下降;氟掺杂氧化锡薄膜在3种介质溶液中的电学稳定性从好到差依次为:NaCl>Na2SO4>NaOH.%BACKGROUND: In electrochemical gene chip, chemical modification of the fluorine doped tin oxide (FTO) films carrier materialsand DNA hybridization reactions need to carry on the different media solutions. The corrosion of various media would have agreater influence on characteristics of the carrier materials, and may be cause degradation or failure phenomenon of the carriermaterials.OBJECTIVE: To observe the electrical stability of the FTO films carrier materials in NaOH, NaCl, Na 2SO4 media solutions.METHODS: The electrical stability of the FTO films carrier materials of electrochemical DNA biochip was investigated using therelative resistance change (ΔR/R) method in 1 mol/L NaOH, NaCl, Na2SO4 media solutions at 25 ℃ and 50 ℃.RESULTS AND CONCLUSION: In the three media solutions, the ΔR/R values of FTO films had a minimal change in NaCl andNa2SO4 media solutions at 25 ℃, while The ΔR/R values in NaOH media solutions at 25 ℃ were much larger than the first two;The ΔR/R values of FTO films showed the same change trends in NaOH, NaCl, Na2SO4 media solutions at 50 ℃. Withincreasing immersion time, the electrical stability of the films decreased rapidly, and the conductivity of the films decreased. Theelectrical stability of the FTO films in three media solutions decreased as NaCl, Na2SO4, and NaOH solutions in sequence.