Nitrogen ion energy dependencies of dielectric constants and compositions of barium carbide-barium nitrate mixed films deposited on silicon wafers by an ion beam assisted deposition technique

摘要

Thin BaC_6-BaN_2O_4 mixed films with a thickness of 25-60 nm were deposited on Si wafers by evaporating BaCO_3 with electron beams and simultaneously applying a mixed beam of N_2 molecules and nitrogen ions (an ion beam assisted deposition technique). BaC_6 films deposited on Si wafers by evaporating only BaCO_3 had low-k values, such as 1.3. In contrast, mixed films containing a small amount of BaC_6 and a large amount of BaN_2O_4 had mild k values, such as 5.6.