Dielectric Constants on Mixture Thin Films of Barium Carbide and Barium Nitrate Deposited on Silicon Wafers by Barium Carbonate Electron Beam Evaporation Using Nitrogen Molecular and Ion Beams

摘要

Thin barium carbide (BaC_6) films were deposited on Si substrates by the electron beam evaporation of barium carbonate (BaCO_3). Mixture films of BaC_6 and barium nitrate (BaN_2O_4) were deposited on Si substrates using N_2 molecules and ion beams during the evaporation of BaCO_3 by electron beams. The fraction of BaN_2O_4 in the mixture films increased with increasing intensity of N_2 molecular and nitrogen ion beams. The prepared films had a large number of C-O bonds, because the BaCO_3 used was a source material. Highly O-doped BaC_6 films had very low dielectric constants of (1-2)ε_0. However, the dielectric constants of the mixture films varied from 1.3 to 5.8ε_0 with increasing proportion of BaN_2O_4.