DENSITY DETERMINATION AND GAS ABSORPTION MEASUREMENTS IN AMBIENT NITROGEN OF SILICON THIN FILMS DEPOSITED BY CRUCIBLE-FREE ELECTRON BEAM EVAPORATION

摘要

Several papers have been published concerning the electron beam deposition of silicon thin films followed by a vacuum interruption and crystallization process. Mostly the gas consumption of the freshly deposited layers was not taken into account and the risk of contamination entry was not discussed. In this paper the effect of gas absorption into electron beam evaporated amorphous silicon films was investigated by microbalance analyses. The influence of deposition process parameters on the layer density and on the ability of gas absorption is presented.