Nitrogen density measurement manner, creation manner in the conversion table for nitrogen density measurement, production manner of the silicon wafer, and the silicon crystal of the production mannered null

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating a silicon crystal by accurately measuring an impurity nitrogen concentration in the silicon crystal.;SOLUTION: The method for evaluating the silicon crystal comprises the step of heating the crystal until a defect reaction in the crystal arrives at a metal-thermal equilibrium state. The method further comprises the steps of measuring the infrared absorption spectrum of the silicon crystal, and obtaining the strength of the absorption peak corresponding to the defect caused by the impurity nitrogen from the absorption spectrum.;COPYRIGHT: (C)2003,JPO