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Heating calculation mannered null silicon crystal of nitrogen density measurement manner and proportional

机译:加热计算方式归零硅晶体的氮密度测量方式与比例

摘要

PROBLEM TO BE SOLVED: To measure the nitrogen concentration in a silicon crystal precisely by a simple differential infrared absorption spectrum without needing respective references regarding nitrogen concentration measurement method and calculation method of proportional conversion coefficient for nitrogen concentration measurement.;SOLUTION: A silicon crystal is heated to 600°C for making it into heat equilibrium, after that the first infrared absorption spectrum is measured. Next, the silicon crystal is heated higher than 600°C for making it into quasi-heat equilibrium, after that the second infrared absorption spectrum of the silicon crystal is measured. Next, the differential infrared absorption spectrum is obtained from the first infrared absorption spectrum and the second infrared absorption spectrum, the intensity of absorption peak corresponding to defect caused by nitrogen, based on the intensity of the absorption peak, the nitrogen concentration in the silicon crystal is obtained.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:通过简单的差分红外吸收光谱精确地测量硅晶体中的氮浓度,而无需分别参考氮浓度测量方法和用于氮浓度测量的比例转换系数的计算方法。加热至600℃以使其达到热平衡,然后测量第一红外吸收光谱。接下来,将硅晶体加热到高于600℃以使其达到准热平衡,之后测量硅晶体的第二红外吸收光谱。接下来,从第一红外吸收光谱和第二红外吸收光谱获得微分红外吸收光谱,基于吸收峰的强度,硅晶体中的氮浓度,吸收峰的强度对应于由氮引起的缺陷。获得。;版权所有:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP4992996B2

    专利类型

  • 公开/公告日2012-08-08

    原文格式PDF

  • 申请/专利权人 富士通株式会社;

    申请/专利号JP20100110393

  • 发明设计人 棚橋 克人;金田 寛;

    申请日2010-05-12

  • 分类号G01N21/35;

  • 国家 JP

  • 入库时间 2022-08-21 17:37:33

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