Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking

摘要

The reduction of defects and high-speed copper filling into a through-silicon-via (TSV) for the threedimensional stacking of Si chips were investigated. The via, with a diameter and depth of 30 μm and 60 μm, respectively, was prepared on a Si wafer by a deep reactive ion etching (DRIE) process. SiO_2, Ti, and Au layers were coated as functional layers on the via wall. In order to increase the filling ratio of Cu into the via, a 3-step periodic-pulse-reverse (PPR) current waveform was suggested for electroplating. The 3-step PPR consisted of low, medium and high current densities for the 1st, 2nd and 3rd steps, respectively. After Cu filling, in order to estimate defects in the Cu-filling, the via was cross-sectioned and observed by field emission scanning electron microscopy (FE-SEM), and also an X-ray radiographic test was performed for non-destructive inspection. The experimental results showed the via was fully filled without a serious defect by the 3-step PPR process after 80 min of plating, specifically, by current densities of -1.24, -3.22, and -9.89 mA/cm~2 (1 st/2nd/3rd step, respectively). The 3-step PPR filling was a kind of bottom-up filling process of Cu into the via, and it was effective for Cu filling in a short time. Defects, like voids in the Cu-filled TSV, were identified by the X-ray radiographic test, which can be useful for ensuring the reliability of a fragile thin Si wafer for 3D packaging.