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Design and development of MEMS-based structures for in-situ characterization of thermo-mechanical behaviour of thin metal films

机译:基于MEMS的金属薄膜热机械行为原位表征结构的设计与开发

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The reliability as well as performance of micro electronic devices strongly depends on the resistance to their thermal degradation induced during operation. In present work, a process flow is developed to fabricate Micro-Electro-Mechanical systems (MEMS) structures, which provide a reliable platform to study thermo-mechanical aspects of silicon-thin metal interface at different temperatures. Here different submicron structures such as cantilever, beams, plus sign, theta and curved cantilevers of varying dimensions are fabricated. The process demonstrates flexibility to manufacture different structures, where the thickness of silicon and of copper can be varied independent to each other. Features based on Si with thickness of 4 or 11 μm coated with Cu of 0.5–3 μm in thickness are manufactured and used as plus signs and curved cantilevers to study deformation over the temperature range of -50 °C to 400 °C. Deflections from 3 μm tensile to -8 μm compressive are observed. This study gives an experimental evidence of behaviour of copper over thermal cycling using MEMS structure. Moreover, Si-Cu based structures are subjected to high temperature cycling to induce degradation and microstructure of their interface is studied. This methodology offers flexibility to characterize different kinds of thin films of various dimensions under individual process conditions.
机译:微电子设备的可靠性和性能在很大程度上取决于对在操作过程中引起的热降解的抵抗力。在当前的工作中,开发了制造微机电系统(MEMS)结构的工艺流程,该结构提供了一个可靠的平台来研究不同温度下的硅薄金属界面的热机械方面。在这里制造了不同的亚微米结构,例如悬臂,梁,加号,θ和不同尺寸的弯曲悬臂。该工艺证明了制造不同结构的灵活性,其中硅和铜的厚度可以彼此独立地变化。制造了基于厚度为4或11μm的Si的特征层,并涂覆了厚度为0.5–3μm的Cu,并用作加号和弯曲悬臂来研究在-50°C至400°C温度范围内的变形。观察到从3μm拉伸至-8μm压缩的挠曲。这项研究提供了使用MEMS结构在热循环中铜行为的实验证据。而且,Si-Cu基结构经受高温循环以引起降解,并且研究了其界面的微观结构。该方法提供了灵活性,可以在单独的工艺条件下表征各种尺寸的不同种类的薄膜。

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