A study of electron forward scattering effects on the footwidth of T-gates fabricated using a bilayer of PMMA and UVIII

摘要

Based on a recently developed process for T-gate fabrication using a PMMA/UVIII bilayer, the effect of electron forward scattering in UVIII resist (as the head layer) on the footwidth of T-gates was studied experimentally. The electron beam spread by forward scattering in UVIII resist was measured as the function of resist thickness at 50 k V and 100 k V. The minimum possible size of T-gates fabricated using t his method was shown to be about 30 nm at 100 kV.