Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabricationud

摘要

We report the first mm-wave measurements for lattice-matched InP HEMTS with 70 nm T-gates made using a UVIII/PMMA bilayer resist. The measured DC gate resistance was 340 Ω/mm, while the extrapolated fT of the 70 nm device was ~300 GHz for a 2x50 µm width device.