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Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps

机译:在纳米结构制造的光刻工艺中使用自组装多层:纳米间隙电完整性的初步评估

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We apply self-assembly to form multilayers on gold structures formed by lithographic techniques to create patterns with spacings in the 10-100 nm regime. Controlled placement and thickness of these multilayers form "molecular ruler" resists to tailor spacings accurately between lithographically defined structures. We report on recent results both in designing and patterning complex nanostructures by combining photolithography and molecular rulers. After exposure, development, metal deposition, and lift-off of both the photoresist and molecular resist, the final product has secondary structures and gaps selectively oriented to create hierarchical nanostructures. The electrical integrity of the nanogaps formed using this process is evaluated for a variety of multilayer thicknesses and electrodes widths.
机译:我们采用自组装技术,在通过光刻技术形成的金结构上形成多层,以创建间距为10-100 nm的图案。这些多层的受控放置和厚度形成“分子尺”抗蚀剂,以精确地调整光刻定义的结构之间的间距。我们通过结合光刻和分子尺来报告设计和构图复杂纳米结构的最新成果。在光致抗蚀剂和分子抗蚀剂的曝光,显影,金属沉积和剥离之后,最终产品具有二级结构和选择性定向以形成分层纳米结构的间隙。对于各种多层厚度和电极宽度,评估了使用该方法形成的纳米间隙的电完整性。

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