首页> 外文期刊>Microelectronic Engineering >Preparation and characterization of Fe~(3+)-doped Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4(0≤x≤0.7)negative temperature coefficient ceramic materials
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Preparation and characterization of Fe~(3+)-doped Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4(0≤x≤0.7)negative temperature coefficient ceramic materials

机译:Fe〜(3+)掺杂Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4(0≤x≤0.7)负温度系数陶瓷材料的制备与表征

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摘要

Based on spinel-type semiconducting electroceramics, negative temperature coefficient (NTC) thermistor materials, Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4(0≤x≤0.7), with different compositions were synthesized by a co-precipitation method. The optimal pH value and the influence of Fe3* doping during the synthesis processing were discussed. As-prepared Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4 materials were characterized by DT/TGA, XRD, FTIR, SEM, electrical measurement and impendance analysis. It was found that, as the Fe doping content in the Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4 samples increased, both the grain size and the density decreased. The as-sintered Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4 samples presented a single-phase cubic spinel structure. The impendance diagram indicated that the grain boundary resistance was dominant in the overall impendance of Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4 NTC ceramic materials. The value of p2s. B25/50, slope and activation energy for the samples Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4(0≤x≤0.7) sintered at 1200 °C were in the range of 453.1-2411 ncm, 3103-3355 K, 3.27325-3.43149 and 0.28207-0.29325 eV, respectively. This suggests that the electrical properties can be adjusted to desired values by controlling the Fe3* ion doping content.
机译:基于尖晶石型半导体陶瓷,通过共沉淀法合成了具有不同组成的负温度系数(NTC)热敏电阻材料Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4(0≤x≤0.7)方法。讨论了合成过程中的最佳pH值和Fe3 *掺杂的影响。通过DT / TGA,XRD,FTIR,SEM,电学测量和阻抗分析对制备的Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4材料进行了表征。发现随着Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4样品中的Fe掺杂含量增加,晶粒尺寸和密度均降低。烧结后的Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4样品呈现单相立方尖晶石结构。阻抗图表明,晶界电阻在Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4 NTC陶瓷材料的总体阻抗中占主导地位。 p2s的值。在1200°C烧结的样品Ni_(0.9)Co_(0.8)Mn_(1.3-x)Fe_xO_4(0≤x≤0.7)的B25 / 50,斜率和活化能在453.1-2411 ncm,3103- 3355 K,3.27325-3.43149和0.28207-0.29325 eV。这表明可以通过控制Fe3 *离子的掺杂含量将电性能调节到所需值。

著录项

  • 来源
    《Microelectronic Engineering》 |2011年第9期|p.2934-2940|共7页
  • 作者单位

    Xinjiang Technical Institute of Physics and Chemistry, CAS, Urumqi 83001], China,Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China,Graduate School of the Chinese Academy of Sciences, Beijing W0049, China;

    Xinjiang Technical Institute of Physics and Chemistry, CAS, Urumqi 83001], China,Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;

    Xinjiang Technical Institute of Physics and Chemistry, CAS, Urumqi 83001], China,Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China,Graduate School of the Chinese Academy of Sciences, Beijing W0049, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    fe ion; doped; co-precipitation method; ntc ceramic material; electrical properties;

    机译:铁离子掺杂共沉淀法ntc陶瓷材料电学性能;

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