Chalcogenide selector devices and their non-linear conduction process

摘要

The non-linear switching mechanism of chalcogenide based Ovonic threshold switches (OTS) is developed. It requires a specific electronic structure, with a wide tail of localised states below the conduction band edge. A band structure model for this is developed using ab-initio calculations. The 4:2 coordinated GeSex alloys are favorable materials for this purpose because they have the correct network connectivity to give a high electron mobility and a lack of crystallization.