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Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices

机译:硫族化物选择器材料的材料选择和非线性传导机理

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摘要

The electronic structure and conduction mechanism of chalcogenide-based Ovonic threshold switches (OTS) used as selectors in cross-point memory arrays is derived from density functional calculations and quasi-Fermi level models. The switching mechanism in OTS is primarily electronic. This uses a specific electronic structure, with a wide tail of localized states below the conduction band edge. In amorphous GeSe2?x the conduction band consists of Ge-Se σ*states with a low effective mass, and with a broad tail of localized Ge-Ge σ* states below this band edge. This leads to the OTS behavior. At high fields the electron quasi-EF moves up through these tail states, lowering the conductivity activation energy, and giving the non-linear switching process. The 4:2 coordinated GeSe2?x based alloys are the most favorable OTS material because they have the correct network connectivity to give a high electron mobility and lack of crystallization, a favorable band structure to produce the non-linear conduction, an optimum band gap, and with nitrogen or carbon alloying, a sufficiently low off-current.
机译:基于密度函数计算和准费米能级模型推导了基于硫族化物的Ovonic阈值开关(OTS)作为交叉点存储阵列中的选择器的电子结构和传导机理。 OTS中的交换机制主要是电子的。这使用了特定的电子结构,在导带边缘以下具有局域态的宽尾巴。在非晶GeSe2?x中,导带由有效质量低的Ge-Seσ*状态组成,并且在该能带边缘以下具有局部Ge-Geσ*状态的宽尾巴。这导致OTS行为。在高电场下,电子准EF通过这些尾态向上移动,从而降低了电导率激活能,并进行了非线性转换过程。 4:2配位的GeSe2?x基合金是最有利的OTS材料,因为它们具有正确的网络连通性以提供高电子迁移率和缺乏结晶作用,具有良好的能带结构以产生非线性传导,具有最佳的带隙,并通过氮或碳合金化,具有足够低的截止电流。

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