Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

摘要

This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using Vapour-Liquid-Solid (VLS) transport at temperature ≤ 1100℃. Focus was made on the nucleation step by observing the evolution of the growth as a function of growth duration with variable Si-content of the Al-Si liquid phase. Addition of propane during the initial heating ramping-up not only avoids liquid de-wetting but also allows good starting of the epitaxial growth. Additionally, it was observed that, by increasing the silicon content in the liquid, the morphology of the grown SiC is improved, and no parasitic AI4C3 inclusions are formed. Limiting the growth rate is found to be essential for getting controlled smooth growth process.