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Influence of annealing temperature on physical properties of Sn-doped CdO thin films by nebulized spray pyrolysis technique

机译:雾化喷雾热解技术对退火温度对掺锡CdO薄膜物理性能的影响

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摘要

Tin (Sn) doped cadmium oxide (CdO) thin films deposited onto the glass substrates by nebulized spray pyrolysis technique (NSP) were annealed for 20 min at different temperatures of 473-548 K in steps of 25 K. X-ray diffraction study showed that all these thin films were polycrystalline with major reflection along (1 1 1) plane and the crystallite size had increased at elevated annealing temperatures. From SEM images, it was found that annealing causes notable changes in the surface morphology. The oxidation states of Cd2+, O2- and Sn4+ were confirmed by X-ray photoelectron spectroscopy analysis. These films were found to have direct band gap energy lying in the range of 2.55-2.42 eV and the average transmittance varies from 73 to 87% with various annealing temperatures. The CdO thin films annealed at 523 K exhibited the lowest resistivity (1.03 x 10(-4) Omega cm).
机译:通过雾化喷雾热解技术(NSP)在玻璃基板上沉积的掺锡(Sn)的氧化镉(CdO)薄膜在473-548 K的不同温度下以25 K的速率退火20分钟。X射线衍射研究表明这表明所有这些薄膜都是多晶的,沿(1 1 1)平面有大反射,并且在高温退火条件下,微晶尺寸增加了。从SEM图像中发现,退火引起表面形态的显着变化。 X射线光电子能谱分析证实了Cd2 +,O2-和Sn4 +的氧化态。发现这些膜具有在2.55-2.42eV范围内的直接带隙能,并且在各种退火温度下,平均透射率在73%至87%之间变化。在523 K退火的CdO薄膜显示出最低的电阻率(1.03 x 10(-4)Omega cm)。

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