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Influence of annealing temperature on physical properties of Sn-doped CdO thin films by nebulized spray pyrolysis technique

机译:退火温度对雾化喷雾热解技术对Sn掺杂CDO薄膜物理性质的影响

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摘要

Tin (Sn) doped cadmium oxide (CdO) thin films deposited onto the glass substrates by nebulized spray pyrolysis technique (NSP) were annealed for 20 min at different temperatures of 473-548 K in steps of 25 K. X-ray diffraction study showed that all these thin films were polycrystalline with major reflection along (1 1 1) plane and the crystallite size had increased at elevated annealing temperatures. From SEM images, it was found that annealing causes notable changes in the surface morphology. The oxidation states of Cd2+, O2- and Sn4+ were confirmed by X-ray photoelectron spectroscopy analysis. These films were found to have direct band gap energy lying in the range of 2.55-2.42 eV and the average transmittance varies from 73 to 87% with various annealing temperatures. The CdO thin films annealed at 523 K exhibited the lowest resistivity (1.03 x 10(-4) Omega cm).
机译:通过雾化喷雾热解技术(NSP)沉积在玻璃基材上的掺杂锡氧化镉(CDO)薄膜在473-548k的不同温度下退火20分钟,步骤为25k。X射线衍射研究显示所有这些薄膜都是多晶,沿(111)平面的主要反射,结晶尺寸在升高的退火温度下增加。来自SEM图像,发现退火导致表面形态的显着变化。通过X射线光电子能谱分析证实了CD2 +,O 2和SN4 +的氧化状态。发现这些薄膜具有直接带隙能量,位于2.55-2.42eV的范围内,平均透射率随各种退火温度的73〜87%。在523 k下退火的CDO薄膜表现出最低电阻率(1.03×10(-4)ωcm)。

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