Effect of seed layer on the ferroelectric properties and leakage current characteristics of sol-gel derived vanadium doped PbZr_(0.53)Ti_(0.47)O_3 films

摘要

In this paper, we report the ferroelectric properties and leakage current characteristics of vanadium-doped PbZr_(0.53)Ti_(0.47)O_3 (PZTV) films grown on various seed layers prepared by a sol-gel process. The PZTV multilayered film of ～ 250-nm-thick showed excellent ferroelectric properties, with a large remnant polarization (P_r) of ～ 30 μC/cm~2 (E_c ～ 90 kV/cm), a high saturation polarization (P_s) of ～85 μC/cm~2 for an applied field of 1,000 kV/cm, fatigue-free characteristics of up to ≥ 10~(10) switching cycles, and a low leakage current density of 7 × 10~(-8) A/cm~2 at 100 kV/cm. X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) investigations indicated that PZTV films grown on PbZr_(0.53)Ti_(0.47)O_3/PbLa_(0.05)TiO_3 (PZT/PLT) seed layers exhibited a dense, well-crystallized micro-structure with random orientations and a rather smooth surface morphology.