METHOD FOR FORMING A TiSiN THIN FILM USING AN ATOMIC LAYER DEPOSITION METHOD CAPABLE OF IMPROVING A LEAKAGE CURRENT PROPERTY

摘要

PURPOSE: A method for forming a TiSiN thin film using an atomic layer deposition method is provided to efficiently manufacture the TiSiN thin film by controlling the partial pressure of Ti containing gas and an amount of Si.;CONSTITUTION: A substrate is preheated by supplying inert gas with Ar or N2 to a chamber. A TiN film is formed on the substrate by repeatedly purging the oversupplied Ti containing gas and a reaction byproduct one or several times. An SiN film is formed by repeatedly purging the oversupplied Si containing gas and a reaction byproduct one or several times. A TiSiN film is formed by repeating the TiN film forming process and the SiN film forming process one or several times.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Transferring a wafer; (BB) Preheating; (CC) Supplying Ti containing gas; (DD) Supplying inert gas; (EE) Supplying N containing gas; (FF) Supplying inert gas; (GG) Supplying Si containing gas; (HH) Supplying inert gas; (II) Supplying N containing gas; (JJ) Supplying inert gas; (KK) Transferring a wafer; (LL) X times; (MM) Y times; (NN) Z times