LOW-LEAKAGE CURRENT FROM ULTRATHIN HFO{sub}2 FILMS FORMED BY ATOMIC LAYER DEPOSITION

摘要

The use of conventional thermally grown silicon dioxide (SiO{sub}2) film as a gate dielectric film in next generation devices is problematic because it produces excessive leakage current. This problem has been addressed by investigating several researchers across the world using different high-k materials such as hafnium oxide (HfO{sub}2), zirconium oxide (ZrO{sub}2), and lanthanum oxide (La{sub}2O{sub}3) as potential gate dielectric materials.