Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr_(0.52)Ti_(0.48)O_3 Thin Films Prepared by Sol-Gel Methods

摘要

The Pb(Zr_(0.52)Ti_(0.48)O_3 thin films with 0-2at. percent Gd dopants (denoted as PGZT) were prepared on Pt/Ti/SiO_2Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of PGZT films were characterized and the ferroelectric properties such as P-V loop, C-V and I-V characteristics were investigated. Improved polarization (2P_r = 46.373 mu C/cm~2) and the low leakage current (J= 1.5X10~(-9)A/cm~2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with lat. percent Gd dopant, which was better than that of the pure PZT thin film (2P_r = 39.099 mu C/cm~2, J = 4.3 X10~(-8)A/cm~2). With the Gd contents up to 2at. percent, a decreased remanent polarization was found.