Growth of carbon nitride thin films by radio-frequency- plasma-enhanced chemical vapor deposition at low temperatures

摘要

In this paper, we report our findings in the deposition of carbon nitride by radio-frequency-plasma-enhanced chemical vapor deposition (RF-PECVD) at temperatures slightly above room temperature (RT) and pressures of 800 mTorr using NHs and CzH` as source gases. The variation of the NH_3/C_2H_4 source gas ratio and rf power is shown to affect the N/C ratio and sp~3/sp~2 ratio in a reproducible manner. presence of microcrystalline carbon nitride in an amorphous CN. matrix with preferred orientation along the (100) direction. X-ray photoelectron microscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) studies show that our assignment of the XPS peaks and FTIR absorption bands are mutually consistent and in good agreement with published data.