Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices

摘要

Multi-gate devices such as DG (Double Gate), SG (Single Gate) and tri-gate, are extensively examined and expected to be one of the promising device structures beyond bulk MOSFETs. We demonstrate the basic characteristics considering random dopant fluctuation for novel device structures and study the sensitivity against process variations. Moreover, we build a 6T-SRAM cell considering random dopant in the channel and calculate the Static Noise Margin (SNM) directly from hp45 down to hp22.