An improved CMOS-based inductor simulator with simplified structure for low-frequency applications

摘要

In this paper, an improved inductor simulator structure is presented, which can be configured as either grounded or floating inductor simulator with low component count. To achieve simplified structure, inductor simulator circuits are designed using a minimal number of transistors and small capacitance, rather than the complex components/modules such as current convey and operational trans-conductance amplifier which are traditionally used. The simulation results based on 0.5 mu m CMOS process parameters show that the proposed structure is able to produce a broad range of inductance values and compared to other similar structures, it provides wider operational frequency bandwidth for the same or comparable inductance value. Furthermore, the structure can be implemented with much smaller chip area using a small capacitance in the circuit, but at the price that it has a higher minimum operational frequency compared to other structures.