一种适用于低功耗LDO的CMOS电流基准设计

摘要

A novel CMOS current reference for low power LDO was presented in this paper. ln such a circuit, the different characteristics of MOS transistor in saturation and sub-threshold region were used to do the temperature compensation. The circuit adopted CMOS structure with the advantages of simple structure, better temperature coefficient and smaller area of layout. The circuit was simulated in CSMC 0.5 μm model. The quiescent current of the circuit was 400 nA. When the temperature change was within-20-110 ℃, the current of the circuit only changed 3.17 nA with second-order temperature compensation.%提出了一种适用于低功耗LDO的新型CMOS电流基准结构,该电路利用处在饱和区以及亚阈值区MOS管不同的温度特性来达到温度补偿,它采用全CMOS结构,具有电路结构简单,温度特性好,版图面积小的优点.基于CSMC 0.5 μm模型库对其进行了仿真,所设计电路的静态电流是400nA时,当温度在-20～110℃的范围内变化时,电流大小仅改变了3.17 nA,且具有二阶温度补偿.