Analysis of lead azide thin films by Rutherford backscattering

摘要

The Rutherford backscattering technique using 1‐MeV protons has been employed to analyze pure and doped lead azide thin films of various thicknessess which had been prepared by vacuum evaporation followed by vapor conversion. The films were found to be approximately homogeneous in composition with depth within the limits of the depth resolution of the experiment. The energy rate loss dE/dx of the films was found to be about 60 keV/μm. The Tl‐doped films showed a somewhat different backscattering spectrum from the undoped films.