Effective p‐type doping of diamond by boron ion implantation

摘要

Highly conducting p‐type diamond layers have been obtained by high‐dose boron implantation followed by annealing (1400 °C) and subsequent removal of the graphite‐like layer that is formed as a result of the heat treatment. Conductivity and Hall measurements showed transport features typical of heavily doped semiconductors. The fact that identical carbon implantations have yielded no measurable conductivity is taken as evidence that the highly conductive p‐type layer obtained by boron implantation is indeed due to effective doping.